Japan's Insulators announced that it will introduce a 4-inch GaN substrate to the market in 2012. The company is currently sampling 2 inch products. The company is developing GaN substrates for LED chips and power semiconductors. Insulators envisioned the use of GaN substrates for LEDs used in automotive headlamps with higher light output power requirements than conventional lighting.
The Japanese NG uses a crystal growth method called "Na Flux method". This method is expected to have an effect of improving quality and reducing cost as compared with the "HVPE method" which is commonly used in the production of GaN substrates. The Na Flux method is a method of liquid phase method in which nitrogen (N2) is sprayed into a mixed solution of Ga and Na to dissolve N into GaN crystals.
Insulators exhibited prototypes of GaN substrates at the Japan exhibition, and there were roughly three types of GaN substrates. The first type is a "single crystal substrate" made of GaN seed crystals. It is characterized by less crystal defects. The dislocation density is said to be less than 10 -6 cm -2 . In this respect, the standard of the GaN substrate is about 10 -5 cm -2 for the blue-violet semiconductor laser and about 10 -6 cm -2 for the LED. That is, the substrate satisfies the standard of use of the LED.
The second is a "template substrate" in which GaN crystals are formed on a sapphire substrate. Although the crystal defects are increased as compared with the substrate made of GaN seed crystal, it is suitable for the requirements of large diameter and low cost. The caliber depends on the size of the sapphire substrate. Since the sapphire substrate has been unveiled for a 6-inch product, the Japanese hamper is also considering increasing the diameter to 6 inches. The dislocation density is about 10 -6 to 10 -7 m -2 .
The third type is a "composite substrate" based on a material different from GaN in addition to sapphire. There are two kinds of substrates, one is based on sapphire and polycrystalline silicon, and the other is sapphire bonded to Si3N4. The former is used for forming an LED driving circuit or the like on the back surface of the substrate, and the latter is used for applications requiring high thermal conductivity.
In addition to the substrate for LED applications, Japan Insulators plans to develop substrates for power components. The goal is to increase the diameter to 6 inches and reduce the dislocation density to 10 -4 to 10 -5 m -2 .
The Japanese NG uses a crystal growth method called "Na Flux method". This method is expected to have an effect of improving quality and reducing cost as compared with the "HVPE method" which is commonly used in the production of GaN substrates. The Na Flux method is a method of liquid phase method in which nitrogen (N2) is sprayed into a mixed solution of Ga and Na to dissolve N into GaN crystals.
Insulators exhibited prototypes of GaN substrates at the Japan exhibition, and there were roughly three types of GaN substrates. The first type is a "single crystal substrate" made of GaN seed crystals. It is characterized by less crystal defects. The dislocation density is said to be less than 10 -6 cm -2 . In this respect, the standard of the GaN substrate is about 10 -5 cm -2 for the blue-violet semiconductor laser and about 10 -6 cm -2 for the LED. That is, the substrate satisfies the standard of use of the LED.
The second is a "template substrate" in which GaN crystals are formed on a sapphire substrate. Although the crystal defects are increased as compared with the substrate made of GaN seed crystal, it is suitable for the requirements of large diameter and low cost. The caliber depends on the size of the sapphire substrate. Since the sapphire substrate has been unveiled for a 6-inch product, the Japanese hamper is also considering increasing the diameter to 6 inches. The dislocation density is about 10 -6 to 10 -7 m -2 .
The third type is a "composite substrate" based on a material different from GaN in addition to sapphire. There are two kinds of substrates, one is based on sapphire and polycrystalline silicon, and the other is sapphire bonded to Si3N4. The former is used for forming an LED driving circuit or the like on the back surface of the substrate, and the latter is used for applications requiring high thermal conductivity.
In addition to the substrate for LED applications, Japan Insulators plans to develop substrates for power components. The goal is to increase the diameter to 6 inches and reduce the dislocation density to 10 -4 to 10 -5 m -2 .
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