IT168 News Samsung's W-series clamshell phones have always been very expensive, and are deeply loved by local businessmen and businessmen. Some time ago, some netizens had exposed the real machine map of the latest model Samsung W2017. The 2.5D folding dual screen design was adopted. The film crafted double-sided glass body was used, and the front and rear panels were made of 3D designs with curved sides. . Now that the aircraft has landed on the Ministry of Industry and Information Technology website, I believe that it is not far from the release date, and local tyrants have new choices.
Although there are currently no passport photos released, but according to the relevant information exposed can be found with the contents of previous users broke the news is almost the same. According to the information given by the Ministry of Industry and Information Technology, Samsung W2017 measurements are 127.8×61.4×15.8mm and weigh 205 grams. Gold and blue color options are available. Equipped with dual 4.2-inch full HD display inside and outside, running Android 6.0 system.
Although positioning high-end government-enterprise business, consumer groups will not care about what configuration, but Samsung W2017's hardware is not weak, using Xiaolong 820 processor, memory configuration 4GB RAM + 64GB ROM, support for 256GB memory card expansion. Front 500 million pixel camera, rear 12 million pixel camera. However, the battery capacity is only 2300mAh, this is not so business.
As for the price, the current price of Samsung's W2016 in Jingdong has remained at 13,999 yuan. Referring to the styles of previous generations of products, Samsung W2017's listing price of more than 20,000 yuan should be eighty-nine.
The Schottky Diode is another type of semiconductor diode which can be used in a variety of wave shaping, switching and rectification applications the same as any other junction diode. The main adavantage is that the forward voltage drop of a Schottky Diode is substantially less than the 0.7 volts of the conventional silicon pn-junction diode.
Schottky diodes have many useful applications from rectification, signal conditioning and switching, through to TTL and CMOS logic gates due mainly to their low power and fast switching speeds.
the Schottky Diode also known as a Schottky Barrier Diode is a solid-state semiconductor diode in which a metal electrode and an n-type semiconductor form the diodes ms-junction giving it two major advantages over traditional pn-junction diodes, a faster switching speed, and a low forward bias voltage.
The metal–to-semiconductor or ms-junction provides a much lower knee voltage of typically 0.3 to 0.4 volts compared against a value of 0.6 to 0.9 volts seen in a standard silicon base pn-junction diode for the same value of forward current.
Variations in the metal and semiconductor materials used for their construction means that silicon carbide (SiC) Schottky diodes are able to turn [ON" with with a forward voltage drop as little as 0.2 volts with the Schottky diode replacing the less used germanium diode in many applications requiring a low knee voltage.
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