New nanostructures accelerate electronic equipment operation

Researchers at the Moscow Institute of Engineering Physics (MEPhI) of the National Nuclear Research University of Russia, in collaboration with experts from the Institute of Metal Physics of the Siberian Branch of the Russian Academy of Sciences, have developed a nanostructure that can increase the operating rate of high-frequency microcircuits.

The nanostructure is a layered material composed of a common semiconductor. The researchers selected the appropriate conditions for the fabrication of new nanostructures: the transition layer structure, the thickness, and the composition of the active layer, so the structure quality was very high. In the case of increasing the indium content of the "active" conductive layer of the material, it helps to reduce the electron quality in the structure and increase their speed, so that the operation of the electronic instrument can also be accelerated.

However, the mechanical pressure of the adjacent layer lattice will therefore increase. Physicists have solved this problem by gradually increasing the indium content of the active layer and adding a thick transition layer.