Recently, Cree announced the introduction of high-quality, low-micro tube 150mm 4H N-type silicon carbide epitaxial wafers. Cree continues to lead the development of the silicon carbide material market by introducing larger diameter epitaxial wafers. This latest technology reduces equipment costs and enables the use of existing 150 mm equipment process lines. The new 150mm epitaxial wafer has a highly uniform epitaxial layer with a thickness of 100 microns and has been ordered.
Silicon carbide is a high-performance semiconductor material that is widely used in the production of lighting, power devices and communication devices, including LEDs, power conversion devices, and RF power transistors for wireless communications. The 150mm monocrystalline silicon carbide substrate can help reduce costs and increase production while driving the continued growth of the silicon carbide industry.
Cree said that the latest 150mm technology will further enhance the standard of silicon carbide wafers, Cree will provide customers with complete solutions for high quality 150mm silicon carbide epitaxial wafers, and provide stable for the leading companies in the power electronics market. Supply guarantee.
Silicon carbide is a high-performance semiconductor material that is widely used in the production of lighting, power devices and communication devices, including LEDs, power conversion devices, and RF power transistors for wireless communications. The 150mm monocrystalline silicon carbide substrate can help reduce costs and increase production while driving the continued growth of the silicon carbide industry.
Cree said that the latest 150mm technology will further enhance the standard of silicon carbide wafers, Cree will provide customers with complete solutions for high quality 150mm silicon carbide epitaxial wafers, and provide stable for the leading companies in the power electronics market. Supply guarantee.
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