The third quarterly report disclosed by Sanan Optoelectronics Co., Ltd. recently revealed that the net profit attributable to the parent company in the first three quarters was 1.447 billion yuan, up 37.82% over the same period of the previous year; the revenue was 3.602 billion yuan, compared with the previous year. Increased by 3.55% over the same period.
Sanan Optoelectronics Co., Ltd. is a high-tech enterprise specializing in the integration, research, development and manufacturing of semiconductor lighting and LED new light sources. In recent years, despite the slowdown in LED market demand, Sanan Optoelectronics has maintained a strong momentum of development due to its advantageous position in the field of LED epitaxial chips.
The third-quarter earnings report shows that at present, the newly purchased MOCVD equipment of Sanan Optoelectronics has reached 40 chambers. As commissioning accelerates, the remaining equipment capacity will be released in the future and will reflect operational benefits.
The continued expansion of the LED business not only brought considerable economic benefits to Sanan Optoelectronics, but also achieved good social benefits. According to the actual production rate of Sanan Optoelectronics 90%, instead of the same brightness of 40-watt incandescent lamps, Sanan Optoelectronics' lighting chips are expected to help the whole society save 682.9 billion kWh of electricity and save 270 million tons of standard coal. Carbon dioxide emissions of 680 million tons, nitrogen oxides emissions of more than 10 million tons.
“With the rapid development of technology, the LED business has rapidly declined, and the development has reached the current stage. The speed of industrial integration has obviously accelerated, and the concentration will be further improved.†The person in charge of Sanan Optoelectronics said that in order to achieve the company's recent planning goals, the company's strategy is realized. Layout, the company will take the initiative to adjust the strategy to lay a solid foundation for the subsequent rapid development.
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